A Novel Photoresist based on Polymeric Acid Amplifier 


Vol. 48,  No. 1, pp. 39-0, Feb.  2004
10.5012/jkcs.2004.48.1.039


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  Abstract

산에 민감한 작용기를 갖는 tert-butyl methacrylate(tBMA)와 산 증식 기능을 갖는 4-hydroxy-4?p-styrenesulfonyloxyisopropylidene dicyclohexane(HSI)과 4-p-styrenesulfonyloxy-4'-tosyloxyisopropylidene dicyclohexane (STI)를 둘 다 함께 갖고 있는 공중합체를 새로운 고분자 산증식형 포토레지스트로 합성하였다. 산증식형 공중합체인 Poly(HSI-co-tBMA) film과 Poly(STI-co-tBMA) film은 산의 부재 시에는 레지스트 공정 온도에 대하여 충분한 열적 안정성을 나타내었다. Poly(STI-co-tBMA) film의 감도는 tBMA homopolymer에 비교하여 2배 정도 증진되었지만, Poly(HSI-co-tBMA) film은 오히려 2배 정도 감도가 저하되는 결과를 나타내었다. 고분자에 도입한 이러한 산증식 기능을 갖는 그룹의 구조에 따라 광감도 증진 효과가 다르게 나타남을 확인하였다. Acid amplifying copolymers are synthesized by the copolymerization of tert-butyl methacrylate(tBMA) with acid-sensitive functional group and 4-hydroxy-4?p-styrenesufonyloxyisopropylidene dicyclohexane(HSI) or 4-p-styrenesulfonyloxy-4'-tosyloxyisopropylidenedicyclohexane(STI) with acid-amplifying group as novel polymeric acid amplifying photoresists. Poly(HSI-co-tBMA) film and Poly(STI-co-tBMA) film as acid amplifying photoresists show reasonable thermal stability in the absence of an acid species. Poly(STI-co-tBMA) film exhibits 2X higher photosensitivity, whereas Poly(HSI-co-tBMA) film show 2X lower photosensitivity compared with ptBMA homopolymer. The attachment of acid-amplifying units to polymer backbones could provide a novel way to enhance the photosensitivity of acid-sensitive polymers depending on the structure of acid-amplifying units.

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  Cite this article

[IEEE Style]

E. J. Lee, Y. S. Jeong, K. T. Lim, Y. T. Jeong, "A Novel Photoresist based on Polymeric Acid Amplifier," Journal of the Korean Chemical Society, vol. 48, no. 1, pp. 39-0, 2004. DOI: 10.5012/jkcs.2004.48.1.039.

[ACM Style]

Eun Ju Lee, Yong Seok Jeong, Kwon Taek Lim, and Yeon Tae Jeong. 2004. A Novel Photoresist based on Polymeric Acid Amplifier. Journal of the Korean Chemical Society, 48, 1, (2004), 39-0. DOI: 10.5012/jkcs.2004.48.1.039.

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